Nanocrystal-Embedded-Insulator (NEI) Ferroelectric FETs for Negative Capacitance Device and Non-Volatile Memory Applications

Nanoscale Research Letters

卷:14

Wenwu Xiao¹  Yan Liu²  Genquan Han²  Jibao Wu²  Yue Peng²  Jincheng Zhang²  Yue Hao² 

[1] School of Materials Science and Engineering, Xiangtan University;

[2] State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University;

关键词: NEI;    Ferroelectric;    NC;    Memory;    Germanium;    FeFET;   

DOI  :  10.1186/s11671-019-2943-9

来源: DOAJ

【 摘 要 】

Abstract We report a novel nanocrystal-embedded-insulator (NEI) ferroelectric field-effect transistor (FeFET) with very thin unified-ferroelectric/dielectric (FE/DE) insulating layer, which is promising for low-voltage logic and non-volatile memory (NVM) applications. The ferroelectric nature of the NEI layers comprising orthorhombic ZrO2 nanocrystals embedded in amorphous Al2O3 is proved by polarization voltage measurements, piezoresponse force microscopy, and electrical measurements. The temperature dependent performance and endurance behavior of a NEI negative capacitance FET (NCFET) are investigated. A FeFET with 3.6 nm thick FE/DE achieves a memory window larger than 1 V, paving a pathway for ultimate scaling of FE thickness to enable three-dimensional FeFETs with very small fin pitch.

【 授权许可】

Unknown