Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology

Dianzi Jishu Yingyong

卷:44

Wei Qidi¹  Zhang Guohao¹  Lin Junming¹  Chen Liang² 

[1] School of Information，Guangdong University of Technology，Guangzhou 510000，China;

[2] The 55th Research Institute of China Electronics Technology Group Corporation，Nanjing 210000，China;

关键词: LNA;    802.11ac;    SiGe;    BiCMOS;   

DOI  :  10.16157/j.issn.0258-7998.172821

来源: DOAJ

【 摘 要 】

This paper presents a 802.11ac low-noise amplifier with bypass function integrated in 0.36 μm SiGe BiCMOS process. In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given. In the circuit design, the SiGe HBTs were designed with inductive emitter degeneration structure. According to the simulation results, the HBT low-noise amplifier is unconditionally stable when the power supply voltage is 5 V and the noise figure(NF)is about 2.2 dB with small signal gain 13.3 dB, and 7.2 dB with insertion loss about 7.2 dB for LNA enabled and LNA bypass status, respectively. The input third order intercept point is about 10.2 dBm with two-tone signal at 2.412 and 2.437 GHz, respectively. Total input power is 0 dBm(-3 dBm/tone).

【 授权许可】

Unknown