期刊论文详细信息
IEICE Electronics Express
Low-output-impedance BiCMOS voltage buffer
Yves Martens1  Johan Bauwelinck1  Peter Ossieur1  Wei Chen1  Dieter Verhulst1  Jan Vandewege1  Xing-Zhi Qiu1 
[1] Ghent University, INTEC/IMEC
关键词: Voltage buffer;    output impedance;    BiCMOS;   
DOI  :  10.1587/elex.1.34
学科分类:电子、光学、磁材料
来源: Denshi Jouhou Tsuushin Gakkai
PDF
【 摘 要 】

References(3)Cited-By(2)A low power, 3.3V BiCMOS voltage buffer is presented showing gigahertz operation, low output impedance and low input current. The buffer is designed to make the voltage at an unused negative output of a current switching DAC equal to the voltage of the positive current output, thus increasing the switching speed of the DAC. By consequence the buffer has to sink a fast switching current. A super emitter follower is used for achieving the low output impedance whereas base current compensation is used to reduce the input current. Simulation results in a 0.35µm SiGe BiCMOS process are included demonstrating a low output impedance, a small input current, a high 3dB bandwidth and a good transient response at 330µW static dissipation.

【 授权许可】

Unknown   

【 预 览 】
附件列表
Files Size Format View
RO201911300148468ZK.pdf 181KB PDF download
  文献评价指标  
  下载次数:19次 浏览次数:18次