Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

IEEE Journal of the Electron Devices Society

卷:9

Shin-Ichi Nishizawa¹  Wataru Saito¹  Taichi Ogawa¹ 

[1] Research Institute for Applied Mechanics, Kyushu University, Fukuoka, Japan;

关键词: Field plate;    power MOSFET;    on-resistance;    Ronsw;    figure-of-merit;   

DOI  :  10.1109/JEDS.2021.3079396

来源: DOAJ

【 摘 要 】

A new low-voltage power MOSFET is proposed to improve the figure-of-merits (FOMs) for power loss reduction. Slit field plate (Slit FP) structure is effective to cope with both the on-resistance $R_{on}$ A reduction and high speed switching due to flat electric field distribution and low gate density by the slit oxide. Therefore, Slit FP power MOSFET achieves better $R_{on}A-R_{on}$ $Q_{sw}$ and $R_{on}A-R_{on}$ $Q_{g}$ tradeoff characteristics compared with conventional FP power MOSFET. TCAD simulation result shows 12% of $R_{on}$ A, 11% of $R_{on}$ $Q_{sw}$ , and 20% of $R_{on}$ $Q_{g}$ can be reduced simultaneously by the Slit FP power MOSFET compared with the conventional FP power MOSFET at the lowest $R_{on}$ A design.

【 授权许可】

Unknown