A Novel Process for Fabricating a High Density Trench MOSFETs for DC-DC Converters

ETRI Journal

关键词: self-align;    on-resistance;    DMOSFET;    trench power device;    Power device;   

Others  :  1184492
DOI  :  10.4218/etrij.02.0102.0501

【 摘 要 】

We propose a new process technique for fabricating very high-density trench MOSFETs using 3 mask layers with oxide spacers and a self-aligned technique. This technique reduces the device size in trench width, source, and p-body region with a resulting inc

   

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