IEEE Journal on Exploratory Solid-State Computational Devices and Circuits | 卷:6 |
A Fully Integrated Reprogrammable CMOS-RRAM Compute-in-Memory Coprocessor for Neuromorphic Applications | |
Vishishtha Bothra1  Fuxi Cai2  Justin M. Correll3  Seungjong Lee3  Zhengya Zhang3  Wei D. Lu3  Michael P. Flynn3  Seung Hwan Lee4  Yong Lim5  | |
[1] Apple, Cupertino, CA, USA; | |
[2] Applied Materials, Santa Clara, CA; | |
[3] Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, USA; | |
[4] Intel, Albuquerque, NM, USA; | |
[5] Samsung Electronics, Yongin, South Korea; | |
关键词: ADC; analog; compute-in-memory; DAC; resistive random access memory (RRAM); vector-matrix multiplication (VMM); | |
DOI : 10.1109/JXCDC.2020.2992228 | |
来源: DOAJ |
【 摘 要 】
Analog compute-in-memory with resistive random access memory (RRAM) devices promises to overcome the data movement bottleneck in data-intensive artificial intelligence (AI) and machine learning. RRAM crossbar arrays improve the efficiency of vector-matrix multiplications (VMMs), which is a vital operation in these applications. The prototype IC is the first complete, fully integrated analog-RRAM CMOS coprocessor. This article focuses on the digital and analog circuitry that supports efficient and flexible RRAM-based computation. A passive
【 授权许可】
Unknown