Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET

Electronics

卷:10

Jaehyuk Lim¹  Changhwan Shin¹  Yejoo Choi¹  Jinwoong Lee¹  Seungjun Moon¹ 

[1] Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea;

关键词: random variation;    line edge roughness (LER);    random dopant fluctuation (RDF);    work function variation (WFV);    negative capacitance (NC);   

DOI  :  10.3390/electronics10161899

来源: DOAJ

【 摘 要 】

In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both linear (V_ds = 0.05 V) and saturation (V_ds = 0.5 V) modes. Sentaurus TCAD and MATLAB were used for the simulation of the baseline JL-NWFET and negative capacitance JL-NWFET (NC-JL-NWFET). Owing to the NC effect, the NC-JL-NWFET showed less variation in terms of device performance, such as σ[V_t], σ[SS], σ[I_on/I_off], σ[V_t]/µ[V_t], σ[SS]/µ[SS], and σ[I_on/I_off]/µ[I_on/I_off], and enhanced device performance, which implies that the NC effect can successfully control the variation-induced degradation.

【 授权许可】

Unknown