Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

卷:1

K. Majumdar¹  N. Agrawal²  A. Razavieh²  S. Datta²  S. Dasgupta²  A. Rajashekhar³  S. Trolier-Mckinstry³ 

[1] Sematech, Albany, NY, USA;

[2] Department of Electrical Engineering, Pennsylvania State University, University Park, PA, USA;

[3] Department of Material Sciences and Engineering, Pennsylvania State University, University Park, PA, USA;

关键词: Negative Capacitance;    Sub-kT/q Switching;    Lead Zirconate Titanate;    Ferroelectric FET;   

DOI  :  10.1109/JXCDC.2015.2448414

来源: DOAJ

【 摘 要 】

Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr_0.52Ti_0.48O₃ as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO₂) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (I_d ~ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

【 授权许可】

Unknown