Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics

Nano-Micro Letters

Weijia Zhou¹  Jinbo Pang¹  Yufen Li¹  Haiyun Liu¹  Qilin Cheng¹  Hong Liu²  Mark H. Rummeli³  Feng Yang⁴  Gianaurelio Cuniberti⁵  Bergoi Ibarlucea⁵  Yu Zhang⁶  Lin Han⁶  Yanhao Wang⁶  Xue Meng⁶  Xiao Wang⁷  Hongbin Zhao⁸ 

[1] Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, 250022, Shandong, Jinan, People’s Republic of China;Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, 250022, Shandong, Jinan, People’s Republic of China;State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, 250100, Jinan, People’s Republic of China;College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, 215006, Suzhou, People’s Republic of China;Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, 215006, Suzhou, People’s Republic of China;Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland;Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany;Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, 708 33, Ostrava, Czech Republic;Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, 518055, Shenzhen, Guangdong, People’s Republic of China;Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany;Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany;Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany;Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany;Institute of Marine Science and Technology, Shandong University, 266237, Qingdao, People’s Republic of China;Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, 518055, Shenzhen, People’s Republic of China;State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, 100088, Beijing, People’s Republic of China;

关键词: Palladium diselenide;    nTMDC;    Synthesis;    Field-effect transistors;    Photodetectors;    Sensors;   

DOI  :  10.1007/s40820-021-00660-0

来源: Springer

【 摘 要 】

tsThe structure–property relationship of PdSe2 is discussed, i.e., layer number vs. tunable bandgap, pentagonal structure vs. anisotropy-based polarized light detection.The synthesis approaches of PdSe2 are thoroughly compared, including bottom-up methods such as chemical vapor transport for bulk crystals, chemical vapor deposition for thin films and single-crystal domains, selenization of Pd films. Besides, top-down strategies are discussed, covering the mechanical exfoliation of bulk crystals, plasma thinning, and vacuum annealing as well as phase transition.The emerging devices of PdSe2 and its van der Waals heterostructures have been delivered such as metal/semiconductor contact, Schottky junction transistors, field-effect transistors, photodetectors, p–n junction-based rectifiers, polarized light detector, and infrared image sensors.Future opportunities of PdSe2-based van der Waals heterostructures are given including logic gate-based digital circuits, RF-integrated circuits, Internet of Things, and theoretical calculation as well as big data for materials science.

【 授权许可】

CC BY