Advances in ultrashallow doping of silicon

Advances in Physics: X

Shannan Chang¹  Yaping Dan¹  Chufan Zhang¹ 

[1] University of Michigan – Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai Chin;

关键词: Ultrashallow junctions;    molecular monolayer doping;    molecular beam epitaxy;    ion implantation;    sub-second thermal annealing;   

DOI  :  10.1080/23746149.2020.1871407

来源: Taylor & Francis

【 摘 要 】

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to form ultrashallow doping, namely molecular monolayer doping, molecular beam epitaxy, and low energy ion implantation. A research perspective will be provided at the end of this review.

【 授权许可】

CC BY