Fully Printed High-Performance n-Type Metal Oxide Thin-Film Transistors Utilizing Coffee-Ring Effect

Nano-Micro Letters

Siyuan Zhu¹  Pei Sheng¹  Wenbin Li²  Bowen Zhu²  Momo Zhao³  Kun Liang⁴  Dingwei Li⁴  Huihui Ren⁴  Hong Wang⁵  Mengfan Ding⁶  Xiaolong Zhao⁶  Shibing Long⁶  Guangwei Xu⁶  Xiao Lin⁷ 

[1] Instrumentation and Service Center for Physical Sciences, Westlake University, 310024, Hangzhou, China;Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China;Institute of Advanced Technology, Westlake Institute for Advanced Study, 310024, Hangzhou, China;Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China;Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071, Xian, China;Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, 310024, Hangzhou, China;Zhejiang University, 310027, Hangzhou, China;Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, 710071, Xian, China;School of Microelectronics, University of Science and Technology of China, 230026, Hefei, China;School of Science, Westlake University, 310024, Hangzhou, China;

关键词: Printed electronics;    Indium tin oxide;    Thin-film transistors;    Coffee-ring effect;    NMOS inverters;   

DOI  :  10.1007/s40820-021-00694-4

来源: Springer

【 摘 要 】

tsFully inkjet-printed transparent high-performance thin-film transistors (TFTs) with ultrathin indium tin oxide (ITO) as semiconducting channels were achieved.The energy band alignment at ITO/Al2O3 channel/dielectric interface was investigated by in-depth spectroscopy analysis.Fully printed n-type metal–oxide–semiconductor inverters based on ITO TFTs exhibited extremely high gain of 181 at a low-supply voltage of 3 V, promising for applications in advanced electronic devices and circuits.

【 授权许可】

CC BY