Effects of Ambient Gases on the Electrical Performance of Solution-Processed C8-BTBT Thin-Film Transistors

Nanoscale Research Letters

Guofu Zhou¹  Sujuan Wu²  Jinwei Gao²  Min Zeng²  J-M Liu³  Zhen Fan⁴  Zhengmiao Zou⁴  Chunlai Luo⁴  Xubing Lu⁴  Aihua Zhang⁴  Jiaying Mai⁴  Naiwei Tang⁴  Waner He⁴ 

[1] 0000 0004 0368 7397, grid.263785.d, Guangdong Provincial Key Laboratory of Optical Information Materials and Technology and Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China;0000 0004 0368 7397, grid.263785.d, Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China;0000 0004 0368 7397, grid.263785.d, Guangdong Provincial Laboratory of Quantum Engineering and Quantum Materials and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, 510006, Guangzhou, China;0000 0001 2314 964X, grid.41156.37, Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China;0000 0004 0368 7397, grid.263785.d, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, and Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Normal University, 510006, Guangzhou, China;

关键词: Solution process;    C8-BTBT;    Thin-film transistors;    Air stability;    Ambient gases;   

DOI  :  10.1186/s11671-019-3007-x

来源: publisher

【 摘 要 】

We performed a systematic study of the influence of environmental conditions on the electrical performance characteristics of solution-processed 2,7-dioctyl [1] benzothieno[3,2-b][1]-benzothiophene (C8-BTBT) thin-film transistors (TFTs). Four environmental exposure conditions were considered: high vacuum (HV), O2, N2, and air. The devices exposed to O2 and N2 for 2 h performed in a manner similar to that of the device kept in HV. However, the device exposed to air for 2 h exhibited significantly better electrical properties than its counterparts. The average and highest carrier mobility of the 70 air-exposed C8-BTBT TFTs were 4.82 and 8.07 cm2V-1s-1, respectively. This can be compared to 2.76 cm2V-1s-1 and 4.70 cm2V-1s-1, respectively, for the 70 devices kept in HV. Furthermore, device air stability was investigated. The electrical performance of C8-BTBT TFTs degrades after long periods of air exposure. Our work improves knowledge of charge transport behavior and mechanisms in C8-BTBT OTFTs. It also provides ideas that may help to improve device electrical performance further.

【 授权许可】

CC BY