Semiconductor infrared plasmonics

Nanophotonics

article

Thierry Taliercio¹  Paolo Biagioni² 

[1] Institute of Electronics and Systems, University of Montpellier;Department of Physics

关键词: plasmonics;    heavily doped semiconductors;    infrared spectroscopy;    nanoantennas;    biosensing;    active plasmonics;   

DOI  :  10.1515/nanoph-2019-0077

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

The coupling between light and collective oscillations of free carriers at metallic surfaces and nanostructures is at the origin of one of the main fields of nanophotonics: plasmonics. The potential applications offered by plasmonics range from biosensing to solar cell technologies and from nonlinear optics at the nanoscale to light harvesting and extraction in nanophotonic devices. Heavily doped semiconductors are particularly appealing for the infrared spectral window due to their compatibility with microelectronic technologies, which paves the way toward their integration in low-cost, mass-fabricated devices. In addition, their plasma frequency can be tuned chemically, optically, or electrically over a broad spectral range. This review covers the optical properties of the heavily doped conventional semiconductors such as Ge, Si, or III–V alloys and how they can be successfully employed in plasmonics. The modeling of their specific optical properties and the technological processes to realize nanoantennas, slits, or metasurfaces are presented. We also provide an overview of the applications of this young field of research, mainly focusing on biosensing and active devices, among the most recent developments in semiconductor plasmonics. Finally, an outlook of further research directions and the potential technological transfer is presented.

【 授权许可】

CC BY