| Nanophotonics | |
| Purification of single-photon emission from hBN using post-processing treatments | |
| article | |
| Chi Li1  Zai-Quan Xu1  Noah Mendelson1  Mehran Kianinia1  Milos Toth1  Igor Aharonovich1  | |
| [1] School of Mathematical and Physical Sciences, University of Technology Sydney | |
| 关键词: hexagonal boron nitride; single-photon emitters; two-dimensional materials; thermal annealing; UV ozone; | |
| DOI : 10.1515/nanoph-2019-0099 | |
| 学科分类:社会科学、人文和艺术(综合) | |
| 来源: De Gruyter | |
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【 摘 要 】
Single-photon emitters (SPEs) in hexagonal boron nitride (hBN) are promising components for on-chip quantum information processing. Recently, large-area hBN films prepared by chemical vapor deposition (CVD) were found to host uniform, high densities of SPEs. However, the purity of these emitters has, to date, been low, hindering their applications in practical devices. In this work, we present two methods for post-growth processing of hBN, which significantly improve SPEs in hBN films that had been transferred from substrates used for CVD. The emitters exhibit high photon purities in excess of 90% and narrow linewidths of ~3 nm at room temperature. Our work lays a foundation for producing high-quality emitters in an ultra-compact two-dimensional material system and paves the way for deployment of hBN SPEs in scalable on-chip photonic and quantum devices.
【 授权许可】
CC BY
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO202107200003536ZK.pdf | 1676KB |
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