Optical and Electrical Properties of III-Nitrides and Related Materials

Jiang, Hongxing¹  Lin, Jingyu¹ 

[1] Texas Tech Univ., Lubbock, TX (United States)

关键词: III-nitride wide bandgap semiconductors;    hexagonal boron nitride;    MOCVD growth;    deep UV photoluminescence;    transport properties.;   

DOI  :  10.2172/1235589
RP-ID  :  2015--1
PID  :  OSTI ID: 1235589

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

Among the members of the III-nitride material system, boron-nitride (BN) is the least studied and understood. Its extraordinary physical properties, such as ultra-high chemical stability, thermal conductivity, electrical resistivity, band gap (Eg ~ 6 eV), and optical absorption near the band gap make hexagonal BN (h-BN) the material of choice for emerging applications such as deep ultraviolet (DUV) optoelectronic devices. Moreover, h-BN has a close lattice match to graphene and is the most suitable substrate and dielectric/separation layer for graphene electronics and optoelectronics. Similar to graphene, low dimensional h-BN is expected to possess rich new physics. Other potential applications include super-capacitors and electron emitters. However, our knowledge concerning the semiconducting properties of h-BN is very scarce. The project aims to extend our studies to the ???newest??? family member of the III-nitride material system, h-BN, and to address issues that have not yet been explored but are expected to profoundly influence our understanding on its fundamental properties and device applications. During the supporting period, we have improved the growth processes of h-BN epilayers by metal organic chemical vapor deposition (MOCVD), investigated the fundamental material properties, and identified several unique features of h-BN as well as critical issues that remain to be addressed.