Microcavity-coupled emitters in hexagonal boron nitride

Nanophotonics

article

Nicholas V. Proscia¹  Harishankar Jayakumar¹  Xiaochen Ge³  Gabriel Lopez-Morales¹  Zav Shotan¹  Weidong Zhou³  Carlos A. Meriles¹  Vinod M. Menon¹ 

[1] Department of Physics, CUNY-City College of New York;Department of Physics, CUNY-Graduate Center;Department of Electrical Engineering, University of Texas at Arlington

关键词: 2D materials;    color center;    hexagonal boron nitride;    microcavities;    quantum emission;    strain;   

DOI  :  10.1515/nanoph-2020-0187

学科分类：社会科学、人文和艺术（综合）

来源: De Gruyter

【 摘 要 】

Integration of quantum emitters in photonic structures is an important step in the broader quest to generate and manipulate on-demand single photons via compact solid-state devices. Unfortunately, implementations relying on material platforms that also serve as the emitter host often suffer from a tradeoff between the desired emitter properties and the photonic system practicality and performance. Here, we demonstrate “pick and place” integration of a Si 3 N 4 microdisk optical resonator with a bright emitter host in the form of ∼20-nm-thick hexagonal boron nitride (hBN). The film folds around the microdisk maximizing contact to ultimately form a hybrid hBN/Si 3 N 4 structure. The local strain that develops in the hBN film at the resonator circumference deterministically activates a low density of defect emitters within the whispering gallery mode volume of the microdisk. These conditions allow us to demonstrate cavity-mediated out-coupling of emission from defect states in hBN through the microdisk cavity modes. Our results pave the route toward the development of chip-scale quantum photonic circuits with independent emitter/resonator optimization for active and passive functionalities.

【 授权许可】

CC BY