A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

Frontiers in Physics

Shaun Jones¹  Ian Oxtoby¹  Grahame Wood¹  Goran Panic²  K. Tittelbach-Helmrich²  Pylyp Ostrovskyy²  Florian Teply²  Gunter Fischer²  Ilias Sourikopoulos³  Leontios Stampoulidis³  Stavros Giannakopoulos⁴  Herbert Zirath⁵  Alexander Grabowski⁶  Philippe Ayzac⁷  Norbert Venet⁷  Anaëlle Maho⁷  Michel Sotom⁷ 

[1] ALTER TECHNOLOGY TÜV NORD UK Ltd., Livingston, United Kingdom;IHP - Leibniz-Institut für innovative Mikroelektronik, Frankfurt, Germany;LEO Space Photonics R&D, Athens, Greece;LEO Space Photonics R&D, Athens, Greece;Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, Sweden;Microwave Electronics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, Sweden;Photonics Laboratory, Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, Gothenburg, Sweden;Thales Alenia Space, Toulouse, France;

关键词: very high throughput satellites;    photonic payloads;    optical interconnects;    optical transceivers;    VCSEL;    photodiode;    satellite communication;   

DOI  :  10.3389/fphy.2021.672941

来源: Frontiers

【 摘 要 】

We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for a flip-chip assembly into a mid-board optics (MBO) optical transceiver module. The ICs are designed in the IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness in radiation environments and high-speed performance featuring bipolar transistors (HBTs) with fT/fMAX values of up to 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components are used, including enclosed layout transistors (ELTs) and digital logic cells. We report design features of the ICs and the module, and provide performance data from post-layout simulations. We present radiation evaluation data on analog devices and digital cells, which indicate that the transceiver ICs will reliably operate at typical total ionizing dose (TID) levels and single event latch-up thresholds found in geostationary satellites.

【 授权许可】

CC BY