Resistive-switching and current-conduction mechanisms in F8BT polymer resistive switch

Micro & nano letters

article

Muhammad N. Awais¹  Maria Mustafa²  Muhammad N. Shehzad¹  Umer Farooq¹  Mirza T. Hamayun¹  Kyung H. Choi³ 

[1] Electrical Engineering Department, COMSATS Institute of Information Technology;Chemical Engineering Department, COMSATS Institute of Information Technology;Mechatronics Engineering Department, Jeju National University

关键词: polymers;    semiconductor switches;    indium compounds;    tin compounds;    aluminium;    spin coating;    field emission electron microscopes;    scanning electron microscopes;    resistive-switching mechanisms;    current-conduction mechanisms;    poly[(9;    9-di-n-octylfluorenyl-2;    7-diyl)-alt-(benzo[2;    1;    3]thiadiazol-4;    8-diyl)];    F8BT polymer resistive switch;    resistive-switching properties;    indium tin oxide;    ITO;    aluminium;    polyethylene terepthalate;    spin coating;    field emission scanning electron microscope;    switching characteristics;    space charge-limited conduction;    SCLC;    energy band diagram;    memory effects;    F8BT active layer;    voltage 5 V;    ITO;    Al;   

DOI  :  10.1049/mnl.2016.0165

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A case of anesthesia for emergency laparotomy due to a ruptured ectopic pregnancy in a patient with antiphospholipid antibody syndrome is presented. It is a pro-thrombotic disorder characterized by the presence of two auto antibodies, lupus anticoagulant and anticardiolipin antibody. The syndrome is characterized by platelet adhesion, expression of prothrombotic molecules, and local complement activation leading to arterial and venous thrombosis.

【 授权许可】

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