Structural, optical, and electrical properties of ZnO nanofilms deposited over PS substrate

Micro & nano letters

article

Reza Shabannia¹  Abbas Mohammed Selman² 

[1] Department of Physics, College of Science, Babol University of Technology;Department of Pharmacognosy and Medicinal Plants, Faculty of Pharmacy, University of Kufa

关键词: zinc compounds;    semiconductor thin films;    II-VI semiconductors;    wide band gap semiconductors;    liquid phase deposition;    X-ray diffraction;    field emission electron microscopy;    scanning electron microscopy;    photoluminescence;    electrical properties;    structural properties;    optical properties;    zinc oxide nanofilms;    porous silicon substrate;    chemical bath deposition method;    X-ray diffraction;    field emission scanning electron microscopy;    FESEM;    photoluminescence spectroscopy;    ultraviolet emission;    semiconductor device;    photoelectron devices;    chemical sensors;    ZnO;   

DOI  :  10.1049/mnl.2016.0753

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

The research successfully revealed the fabrication of zinc oxide (ZnO) nanofilms with hexagonal (002) structure grown on porous silicon (PS) substrate using chemical bath deposition method. Their structural, optical, and electric characteristics were investigated through X-ray diffraction, field emission scanning electron microscopy (FESEM), and photoluminescence spectroscopy. FESEM showed that ZnO nanofilms were formed on top and inside the pores of PS substrate with hexagonal shape. The strong ultraviolet emission of ZnO nanofilms is also presented at ∼383 nm near the band edge energy levels which can be applied in semiconductor device both photoelectron devices and chemical sensors. In addition, current–voltage (I–V) characteristics revealed that the current level for ZnO nanofilms was about three times larger than for PS layer.

【 授权许可】

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