Enhancement-mode AlGaN/GaN HEMTs with optimised electric field using a partial GaN cap layer

Micro & nano letters

article

Haijun Guo¹  Baoxing Duan¹  Shenlong Xie¹  Song Yuan¹  Yintang Yang¹ 

[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: high electron mobility transistors;    aluminium compounds;    gallium compounds;    III-V semiconductors;    wide band gap semiconductors;    two-dimensional electron gas;    optimised electric field;    surface electric field distribution;    conventional enhancement-mode AlGaN-GaN high-electron-mobility transistors;    novel enhancement-mode AlGaN-GaN HEMT;    P-type GaN gate;    optimised surface electric field;    partial GaN cap layer;    drain electrodes;    two-dimensional electron gas density reduction;    2DEG density reduction;    polarisation effect;    electric-field modulation effect;    breakdown voltage;    AlGaN-GaN;   

DOI  :  10.1049/mnl.2017.0042

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Tension pneumothorax during ventilating bronchoscopy for foreign body removal is a rare but life threatening complication, which if not promptly diagnosed and treated can prove fatal. We present a case of tension pneumothorax, due to a laceration in the right main bronchus caused by bronchoscope, in a one year old child, who underwent bronchoscopy for removal of foreign body (bead). The child was successfully treated and managed by immediate insertion of 14 gauge IV cannula in the pleural cavity followed by chest tube insertion. The laceration was subsequently repaired and foreign body removed by thoracotomy.

【 授权许可】

CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND