Single-phase cuprite thin films prepared by a one-step low-vacuum thermal oxidation technique

Micro & nano letters

article

Wenhan Du¹  Jingjing Yang¹  Keke Zhang³ 

[1] School of Electrical and Optoelectronic Engineering, Changzhou Institute of Technology;Suzhou Institute of Nano-Tech and Nano-Bionic, Chinese Academy of Sciences;School of Materials Science and Engineering, Nanyang Technological University

关键词: semiconductor materials;    scanning electron microscopy;    annealing;    semiconductor thin films;    semiconductor growth;    copper compounds;    oxidation;    surface morphology;    vacancies (crystal);    X-ray chemical analysis;    X-ray diffraction;    growth temperatures;    X-ray diffraction;    surface morphology;    annealing temperature;    turning temperature;    low-vacuum thermal annealing technique;    scanning electron microscopy;    electron dispersion spectra;    single-phase cuprite thin films;    solar cells;    copper vacancy;    temperature 400.0 degC to 1000.0 degC;    Cu2O;   

DOI  :  10.1049/mnl.2018.5449

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

Cu 2 O thin film solar cells have attracted the interest of many researchers owing to their non-toxic and earth-abundant properties. High-quality pure-phase Cu 2 O thin films were prepared by using a simple low-vacuum thermal annealing technique. The growth temperatures of the Cu 2 O thin films were varied from 400 to 1000°C. X-ray diffraction (XRD) and scanning electron microscopy were used to characterise the structural and morphological changes of the thin films. The XRD results suggested that all the films were pure-phase Cu 2 O; thus, no second-phase CuO was observed. The detailed evolution of the surface morphology was investigated. The electron dispersion spectrum (EDS) results show that the atomic ratio of Cu and O were changed with the annealing temperature, the ratio change from around 2:1 to 1.84:1 with the turning temperature of 800°C, indicating copper vacancy formed during annealing temperature higher than 800°C. EDS results well matched the d-spacing changes of the XRD results.

【 授权许可】

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