Effect of high-temperature AlN buffer on anisotropy of semi-polar (11-22) GaN with two pressure growth stages

Micro & nano letters

article

Jun Han¹  Fengfeng Shi¹  Yanhui Xing¹  Peiyuan Wan¹  Zhiyuan Gao¹  Xiaoling Hu¹  Tao Li¹  Shiwei Cao¹  Yao Zhang¹ 

[1] Key Laboratory of Opto-electronics Technology, Ministry of Education, College of Microelectronics, Beijing University of Technology

关键词: surface morphology;    vapour phase epitaxial growth;    III-V semiconductors;    gallium compounds;    aluminium compounds;    MOCVD;    wide band gap semiconductors;    X-ray diffraction;    semiconductor growth;    buffer layers;    semiconductor epitaxial layers;    high-pressure effects;    high-temperature effects;    epitaxial GaN layer;    HT-AlN buffer;    high-temperature AlN buffer layers;    low-pressure growth stages;    LT-GaN buffer;    low-temperature GaN buffer layers;    metal-organic chemical vapour deposition;    semipolar (11-22) GaN thin films;    m-plane sapphire;    high-pressure growth stages;    in-planar directions;    X-ray rocking curve full width at half maximum;    X-ray diffraction;    crystal quality;    surface morphology;    AlN-GaN;    Al2O3;   

DOI  :  10.1049/mnl.2018.5669

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

The low-temperature GaN (LT-GaN) and high-temperature AlN (HT-AlN) buffer layers were grown on m -plane sapphire by metal–organic chemical vapour deposition. The following semi-polar (11-22) GaN thin films were deposited under high- and low-pressure growth stages. Anisotropy of (11-22) GaN grown on HT-AlN buffer along two in-planar directions ([11-2-3] and [-1100]) were clearly suppressed, the maximum variation of the X-ray rocking curve full width at half maximum of (11-22) GaN on LT-GaN buffer was 0.2498°, that of (11-22) GaN on HT-AlN buffer was 0.0488°. The X-ray diffraction results of on-axis and off-axis both indicated that the crystal quality of the epitaxial GaN layer with HT-AlN buffer was obviously improved, and surface morphology was much smoother.

【 授权许可】

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