Numerical analysis of high-voltage RESURF AlGaN/GaN high-electron-mobility transistor with graded doping buffer and slant back electrode

Micro & nano letters

article

Chao Zhu¹  Xingye Zhou²  Zhihong Feng²  Zhiheng Wei¹  Ziyu Zhao³  Ziqi Zhao¹ 

[1] Department of Microelectronic Science and Engineering, Ningbo University;National Key Laboratory of ASIC, Hebei Semiconductor Research Institute;College of Sciences, Xi'an Shiyou University;National Lab of Solid State Microstructures, Nanjing University

关键词: aluminium compounds;    two-dimensional electron gas;    III-V semiconductors;    semiconductor device breakdown;    wide band gap semiconductors;    gallium compounds;    space charge;    high electron mobility transistors;    semiconductor device models;    semiconductor doping;    graded doping buffer;    GDB;    AlGaN-GaN;    voltage 1701.0 V;    voltage 2150.0 V;    frequency 13.84 GHz;    frequency 8.24 GHz;    frequency 14.8 GHz;    frequency 8.76 GHz;    2DEG;    high-voltage RESURF AlGaN-GaN high-electron-mobility transistor;    reduced surface field AlGaN-GaN high-electron-mobility transistor;    slant back electrode;    p-dopant density;    ON-state resistance;    gate-drain spacing;    back electrode RESURF HEMT;    conventional BE-RESURF HEMT;    peak electric field;    electric field distribution;    low p-dopant density;    breakdown voltage;    electric field lines;    concentrated negative space charges;    SBE;   

DOI  :  10.1049/mnl.2018.5421

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A reduced surface field (RESURF) AlGaN/GaN high-electron-mobility transistor (HEMT) with graded doping buffer (GDB) and slant back electrode (SBE) is proposed. In the GDB, the p-dopant density increases linearly both from top to bottom and right to left. The concentrated negative space charges in the lower-left corner of GDB attract the electric field lines from the channel and barrier towards the gate under OFF-state, which flats the electric field and enhances the breakdown voltage ( V br ). Additionally, the low p-dopant density near the top of GDB achieves the device with low ON-state resistance ( R ON ). The SBE flats the electric field along the channel above it and introduces a peak electric field near its edge. Simulation results show a V br of 2150 V and R ON of 7.05 Ωmm for the proposed device, compared with 1701 V and 7.73 Ωmm for the conventional back electrode RESURF HEMT (BE-RESURF HEMT) with the same gate -drain spacing. Moreover, due to the reduced depletion of 2DEG from the GDB, the proposed device shows slight increases in f T and f max (8.76 and 14.80 GHz), comparing with the conventional BE-RESURF HEMT (8.24 and 13.84 GHz).

【 授权许可】

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