期刊论文详细信息
【 摘 要 】
This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.
【 授权许可】
CC BY|CC BY-ND|CC BY-NC|CC BY-NC-ND
【 预 览 】
Files | Size | Format | View |
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RO202107100002649ZK.pdf | 954KB | download |