Novel SOI LIGBT with fast-switching by the electric field modulation

Micro & nano letters

article

Licheng Sun¹  Baoxing Duan¹  Yintang Yang¹ 

[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: electric breakdown;    silicon-on-insulator;    insulated gate bipolar transistors;    semiconductor device models;    electric field modulation;    lateral insulated gate bipolar transistor;    single-step buried oxide structure;    silicon-on-insulator layer;    SSBO structure;    high electric field peak;    electric field distributions;    breakdown voltage;    drift region length;    SSBO SOI LIGBT;    voltage drop;    voltage 98.0 V;    size 4.4 mum;    size 12.0 mum;    voltage 1.72 V;    Si;   

DOI  :  10.1049/mnl.2019.0424

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A novel silicon-on-insulator lateral insulated gate bipolar transistor (SOI LIGBT) is proposed and investigated in this work. The device features a single-step buried oxide (SSBO) structure formed on the silicon-on-insulator (SOI) layer. The SSBO structure introduces a high electric field peak by the electric field modulation to modulate electric field distributions. Therefore, the proposed SOI LIGBT can maintain the high breakdown voltage (BV) while shortening the length of drift region, which achieves the decreased total number of stored carriers during the turn-on and fast depletion of drift region during the turn-off. As the simulation results show, under the same BV of 98 V, the drift region length of the proposed SOI LIGBT is 4.4 μm, which is much shorter than that of the conventional SOI LIGBT of 12.0 μm. So the turn-off time of SSBO SOI LIGBT is 76.6% lower than that of the conventional SOI LIGBT at the same forward voltage drop of 1.72 V. It shows that the tradeoff between forward voltage drop and turn-off time can be significantly improved.

【 授权许可】

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