Small-sized silicon-on-insulator lateral insulated gate bipolar transistor for larger forward bias safe operating area and lower turnoff energy

Micro & nano letters

article

Qiang Fu¹  Bo Zhang¹  Xiaorong Luo¹  Zhigang Wang¹  Zhaoji Li¹ 

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

关键词: cathodes;    elemental semiconductors;    insulated gate bipolar transistors;    silicon;    silicon-on-insulator;    small-sized silicon-on-insulator lateral insulated gate bipolar transistor;    forward bias safe operating area;    silicon-on-insulator substrate;    lowly doped p-type pillar;    drift region;    vertical doping termination technology;    p-pillar layer;    electric field reshaping;    y-direction;    current flow lines;    cathode;    deep-oxide trench silicon-on-insulator lateral insulated gate bipolar transistor;    forward voltage drop;    turnoff energy loss;    Si;   

DOI  :  10.1049/mnl.2013.0040

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

This Letter presents a novel small-sized lateral insulated gate bipolar transistor on silicon-on-insulator substrate (SOI-LIGBT), which features a lowly doped p -type pillar alongside the oxide trench in the drift region. The variation in vertical doping termination technology is also proposed for the first time. The p -pillar layer leads to electric field reshaping in the y -direction, and homogenises current flow lines under the gate and cathode. It results in a very wide forward bias safe operating area (FBSOA) for the proposed SOI-LIGBT, which is obviously improved by over 50% compared with the deep-oxide trench SOI-LIGBT (DT SOI-LIGBT). Moreover, at the same forward voltage drop of 1 V, the turnoff energy loss for the proposed SOI-LIGBT is reduced by 28.5 and 81.2% compared with those of DT SOI-LIGBT and the conventional SOI-LIGBT, respectively.

【 授权许可】

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