Uncooled CMOS fully integrated antenna-coupled terahertz thermal detector

Micro & nano letters

article

Xu Wang¹ 

[1] School of Microelectronics, Tianjin University

关键词: CMOS integrated circuits;    temperature sensors;    loop antennas;    resistors;    temperature measurement;    submillimetre wave antennas;    resonators;    silicon;    elemental semiconductors;    uncooled CMOS fully integrated antenna-coupled terahertz thermal detector;    uncooled monolithic resonant terahertz;    standard CMOS technology;    loop antenna;    temperature-sensitive device;    uncooled monolithic resonant THz thermal detector;    polysilicon resistor;    TCVD;    high-temperature coefficient of voltage;    size 55.0 nm;    frequency 2.58 THz;    Si;   

DOI  :  10.1049/mnl.2020.0192

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

In this Letter, an uncooled monolithic resonant terahertz (THz) thermal detector using a standard 55 nm CMOS technology is presented. The detector is constructed by the integration of a loop antenna loaded with a polysilicon resistor and a proportional to absolute temperature sensor, which is used as a temperature-sensitive device. An overview of the design considerations, as well as the comparatively better characterisation results are demonstrated in detail. A high-temperature coefficient of voltage (TCV D ) of 10.11 mV/°C, a maximum responsivity of 48.67 V/W, and a minimum noise equivalent power of 1.22 μW/Hz 0.5 for the thermal detector are measured at the optimal operating point of 2.58 THz.

【 授权许可】

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