Cu-Doped TiNxOy Thin Film Resistors DC/RF Performance and Reliability

Applied Sciences

Anton S. Tarasov¹  Alexander S. Voloshin¹  Ivan V. Nemtsev¹  Filipp A. Baron¹  Mikhail V. Rautskiy¹  Ivan A. Tarasov¹  Nikita V. Volkov¹  Lev V. Shanidze¹  Stepan O. Konovalov²  Fyodor V. Zelenov² 

[1] Federal Research Center KSC SB RAS, Kirensky Institute of Physics, 660036 Krasnoyarsk, Russia;Institute of Space Technology, Reshetnev Siberian State University of Science and Technology, 660037 Krasnoyarsk, Russia;

关键词: high-frequency passive components;    high power density;    thin film;    copper doped titanium oxynitride;    non-linear;    resistors;   

DOI  :  10.3390/app11167498

来源: DOAJ

【 摘 要 】

We fabricated Cu-doped TiN_xO_y thin film resistors by using atomic layer deposition, optical lithography, dry etching, Ti/Cu/Ti/Au e-beam evaporation and lift-off processes. The results of the measurements of the resistance temperature dependence, non-linearity, S-parameters at 0.01–26 GHz and details of the breakdown mechanism under high-voltage stress are reported. The devices’ sheet resistance is 220 ± 8 Ω/□ (480 ± 20 µΩ*cm); intrinsic resistance temperature coefficient (TCR) is ~400 ppm/°C in the T-range of 10–300 K; and S-parameters versus frequency are flat up to 2 GHz with maximum variation of 10% at 26 GHz. The resistors can sustain power and current densities up to ~5 kW*cm⁻² and ~2 MA*cm⁻², above which they switch to high-resistance state with the sheet resistance equal to ~200 kΩ/□ (~0.4 Ω*cm) caused by nitrogen and copper desorption from TiN_xO_y film. The Cu/Ti/TiN_xO_y contact is prone to ageing due to gradual titanium oxidation while the TiN_xO_y resistor body is stable. The resistors have strong potential for applications in high-frequency integrated and hybrid circuits that require small-footprint, medium-range resistors of 0.05–10 kΩ, with small TCR and high-power handling capability.

【 授权许可】

Unknown