Synthesis of Cu 2 ZnSnSe 4 thin-film solar cells from nanoparticles by a non-vacuum mechanical ball milling and rapid thermal processing

Micro & nano letters

article

Ying Liu¹  Xiaowei Xu³  Ke Liu¹  Huihong Liu² 

[1] Key Laboratory of Low Dimensional Optoelectric Materials and Devices, Hubei University of Arts and Science;Engineering Research Center for Clean Production of Textile Printing and Dyeing, Ministry of Education of Wuhan Textile University;School of Materials Science and Engineering, Shanghai Institute of Technology

关键词: semiconductor thin films;    solar cells;    absorption coefficients;    energy gap;    zinc compounds;    nanoparticles;    copper compounds;    semiconductor growth;    ternary semiconductors;    annealing;    nanofabrication;    powders;    tin compounds;    ball milling;    photovoltaic effects;    nonvacuum mechanical ball milling;    rapid thermal processing;    nonvacuum synthesis method;    stannite CZTSe nanoparticles;    ambient mechanical milling procedure;    elemental selenium powders;    nontoxic ethanol;    compact CZTSe thin films;    photovoltaic properties;    p-type semiconductor behaviour;    electrical properties;    absorption coefficient;    optical properties;    Cu2ZnSnSe4 thin-film solar cells;    annealing treatment;    size 20.0 nm;    electron volt energy 0.91 eV;    Cu2ZnSnSe4;   

DOI  :  10.1049/mnl.2019.0788

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

A truly simple, reproducible, and environmentally friendly non-vacuum synthesis method for synthesising of carbon-free Cu 2 ZnSnSe 4 (CZTSe) absorber layer has been presented. The stannite CZTSe nanoparticles with an average size of about 20 nm distributions were fabricated by an ambient mechanical milling procedure using Cu 2 Se, Zn, Sn, elemental selenium powders as raw materials and non-toxic ethanol as solvent. The compact CZTSe thin films were formed via an annealing treatment under Ar/Se atmosphere using rapid thermal processing. The optical properties of the obtained CZTSe thin films are the absorption coefficient ( α ) exceeding 10 4 cm −1 and E g of 0.91 eV. The electrical properties of the CZTSe thin films indicate p -type semiconductor behaviour. The photovoltaic properties of this solar cell are power conversion efficiency of 0.18%.

【 授权许可】

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