Nanoscale Research Letters | |
The Design of the AZO Conductive Layer on Microchannel Plate | |
Ming Qi1  Yuman Wang2  Jianyu Gu3  Kaile Wen3  Wenjing Yao3  Baojun Yan3  Shulin Liu4  Binting Zhang4  | |
[1] School of Physics, Nanjing University, 210093, Nanjing, China;School of Physics, Nanjing University, 210093, Nanjing, China;State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, 100049, Beijing, China;State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, 100049, Beijing, China;State Key Laboratory of Particle Detection and Electronics, Institute of High Energy Physics, Chinese Academy of Sciences, 100049, Beijing, China;University of Chinese Academy of Sciences, 100049, Beijing, China; | |
关键词: ALD-MCP; The AZO conductive layer; The working resistance; ZnO; AlO; | |
DOI : 10.1186/s11671-021-03515-0 | |
来源: Springer | |
【 摘 要 】
When the resistivity of the AZO conductive layer is within the MCP resistance requirement, the interval of the Zn content is very narrow (70–73%) and difficult to control. Aiming at the characteristics of the AZO conductive layer on the microchannel plate, an algorithm is designed to adjust the ratio of the conductive material ZnO and the high resistance material Al2O3. We put forward the concept of the working resistance of the MCP (i.e., the resistance during the electron avalanche in the microchannel). The working resistance of AZO-ALD-MCP (Al2O3/ZnO atomic layer deposition microchannel plate) was measured for the first time by the MCP resistance test system. In comparison with the conventional MCP, we found that the resistance of AZO-ALD-MCP in working state and non-working state is very different, and as the voltage increases, the working resistance significantly decreases. Therefore, we proposed a set of analytical methods for the conductive layer. We also proposed to adjust the ratio of the conductive material of the ALD-MCP conductive layer to the high-resistance material under the working resistance condition, and successfully prepared high-gain AZO-ALD-MCP. This design opens the way for finding better materials for the conductive layer of ALD-MCP to improve the performance of MCP.
【 授权许可】
CC BY
【 预 览 】
Files | Size | Format | View |
---|---|---|---|
RO202107023454600ZK.pdf | 1453KB | download |