Superior Pseudocapacitive Storage of a Novel Ni3Si2/NiOOH/Graphene Nanostructure for an All-Solid-State Supercapacitor

Nano-Micro Letters

Hong Zhou¹  Xin Feng¹  Dong Wang¹  Jing Ning¹  Maoyang Xia¹  Yue Hao¹  Jincheng Zhang¹ 

[1] The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, 710071, Xi’an, People’s Republic of China;Shaanxi Joint Key Laboratory of Graphene, Xidian University, 710071, Xi’an, People’s Republic of China;

关键词: Pseudocapacitive storage;    Creeper-like NiSi;    NiOOH;    Graphene;    All-solid-state supercapacitors;   

DOI  :  10.1007/s40820-020-00527-w

来源: Springer

【 摘 要 】

tsThree types of Ni3Si2 were successfully fabricated by low-pressure all-solid melting-reconstruction chemical vapor deposition, and the growth pattern changed with the carbon source content.In a carbon-rich atmosphere, high-energy atoms bombard the Ni and Si surface, and reduce the free energy in the solid Ni–Si particles’ thermodynamic equilibrium, considerably catalyzing the growth of Ni–Si nanocrystals.Ni3Si2/NiOOH/graphene provides a large specific area and NiOOH inhibits insulation on the electrode surface in an alkaline solution and accelerates the electron exchange rate.

【 授权许可】

CC BY