Direct probing of semiconductor barium titanate via electrostatic force microscopy

Cerâmica

S. M. Gheno¹  H. L. Hasegawa¹  P. I. Paulin Filho¹ 

[1] ,Universidade Federal de S. Carlos Departamento de Engenharia de Materiais S. Carlos SP

关键词: electrostatic force microscopy;    electric potential;    barriers;    barium titanate;    microscopia de força eletrostática;    potencial elétrico;    barreiras;    titanato de bário;   

DOI  :  10.1590/S0366-69132007000200015

来源: SciELO

【 摘 要 】

Electrostatic force microscopy (EFM) was used to directly probe surface potential in doped barium titanate semiconducting ceramics. EFM measurements were performed using noncontact scans at a constant tip-sample separation of 75 nm with varied bias voltages applied to the sample. The applied voltage was mapped up to 10 V and the distribution of potential across the sample showed changes in regions that matched the grain boundaries, displaying a constant barrier width of 145.2 nm.

【 授权许可】

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