Optical Properties and Surface morphology of ZnTe thin films prepared by multiple potential steps

Journal of the Brazilian Chemical Society

Murilo F. Gromboni¹  Francisco W. S. Lucas¹  Lucia H. Mascaro¹ 

[1] ,Universidade de Federal de São Carlos Departamento de Química Laboratório de Eletroquímica e Cerâmica (LIEC)São Carlos SP ,Brazil

关键词: electrodeposition;    semiconductor;    photocurrent;    ZnTe thin film;   

DOI  :  10.5935/0103-5053.20140020

来源: SciELO

【 摘 要 】

In this work, the ZnTe thin films were electrodeposited using potentiostatic steps, on Pt substrate. The effect of steps number, the deposition time for each element (Zn or Te) and layer order (Zn/Te or Te/Zn) in the morphology, composition, band gap energy and photocurrent was evaluated. Microanalysis data showed that the ratio Zn/Te ranged from 0.12 and 0.30 and the film was not stoichiometric. However, the band-gap value obtained from in all experimental conditions used in this work was 2.28 eV, indicating film growth of ZnTe. The samples with higher Zn showed higher photocurrent, which was of the order of 2.64 µA cm-2 and dendritic morphology.

【 授权许可】

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