Semiconductor Sensors Application for Definition of Factor of Ozone Heterogeneous Destruction on Teflon Surface

Sensors

Ludmila A. Obvintseva²  Fatima Kh. Chibirova¹  Serge A. Kazakov²  Alexander K. Avetisov²  Marina V. Strobkova² 

[1] id="af1-sensors-03-00504">Karpov Research Institute For Physical Chemistry, Russia 105064, Moscow, ul. Vorontsovo Pole, 10. Tel. [phone], Fax. [phone]

关键词: semiconductor sensors;    heterogeneous death-rate of ozone;    Teflon;   

DOI  :  10.3390/s3110504

来源: mdpi

【 摘 要 】

In our paper we present the results of our research, which was carried out by means of semiconductor sensor techniques (SCS), which allowed evaluating heterogeneous death-rate of ozone (γ) Teflon surface. When ozone concentration is near to Ambient Air Standard value, γ is assessed to be equal to 6,57*10^-7. High technique response provide possibility to determine ozone contents in the air media and the percentage of ozone, decomposed on the communication surfaces and on the surfaces of installation in the low concentration range (1–100 ppb).

【 授权许可】

Unknown   
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