Effects of the F4TCNQ-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Materials

Ching-Lin Fan²  Wei-Chun Lin¹  Hsiang-Sheng Chang²  Yu-Zuo Lin²  Bohr-Ran Huang¹  Federico Bella³ 

[1] Graduate Institute of Electro-Optical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Da’an District, Taipei City 106, Taiwan;Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Da’an District, Taipei City 106, Taiwan;;Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keelung Road, Da’an District, Taipei City 106, Taiwan

关键词: pentacene;    organic thin-film transistors (OTFTs);    F₄TCNQ;    Teflon;    carrier injection layer;   

DOI  :  10.3390/ma9010046

来源: mdpi

【 摘 要 】

In this paper, the top-contact (TC) pentacene-based organic thin-film transistor (OTFT) with a tetrafluorotetracyanoquinodimethane (F₄TCNQ)-doped pentacene interlayer between the source/drain electrodes and the pentacene channel layer were fabricated using the co-evaporation method. Compared with a pentacene-based OTFT without an interlayer, OTFTs with an F₄TCNQ:pentacene ratio of 1:1 showed considerably improved electrical characteristics. In addition, the dependence of the OTFT performance on the thickness of the F₄TCNQ-doped pentacene interlayer is weaker than that on a Teflon interlayer. Therefore, a molecular doping-type F₄TCNQ-doped pentacene interlayer is a suitable carrier injection layer that can improve the TC-OTFT performance and facilitate obtaining a stable process window.

【 授权许可】

CC BY   
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