Performance and Transient Behavior of Vertically Integrated Thin-film Silicon Sensors

Sensors

Nicolas Wyrsch¹  Gregory Choong²  Clément Miazza² 

[1] Institut de Microtechnique (IMT), University of Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland E-mails

关键词: Image sensor;    monolithic integration;    amorphous silicon;   

DOI  :  10.3390/s8084656

来源: mdpi

【 摘 要 】

Vertical integration of amorphous hydrogenated silicon diodes on CMOS readout chips offers several advantages compared to standard CMOS imagers in terms of sensitivity, dynamic range and dark current while at the same time introducing some undesired transient effects leading to image lag. Performance of such sensors is here reported and their transient behaviour is analysed and compared to the one of corresponding amorphous silicon test diodes deposited on glass. The measurements are further compared to simulations for a deeper investigation. The long time constant observed in dark or photocurrent decay is found to be rather independent of the density of defects present in the intrinsic layer of the amorphous silicon diode.

【 授权许可】

CC BY   
© 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.