Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels

Sensors

Jamie Alexander Ballin¹  Jamie Phillip Crooks²  Paul Dominic Dauncey¹  Anne-Marie Magnan¹  Yoshinari Mikami³  Owen Daniel Miller²  Matthew Noy¹  Vladimir Rajovic³  Marcel Stanitzki²  Konstantin Stefanov²  Renato Turchetta²  Mike Tyndel²  Enrico Giulio Villani²  Nigel Keith Watson³ 

[1] Department of Physics, Blackett Laboratory, Imperial College London, London, SW7 2AZ, U.K;Rutherford Appleton Laboratory, Science and Technology Facilities Council (STFC), Harwell Science and Innovation Campus, Didcot, OX11 0QX, U.K;School of Physics and Astronomy, University of Birmingham, Birmingham, B15 2TT, U.K

关键词: CMOS;    image sensor;    fill factor;   

DOI  :  10.3390/s8095336

来源: mdpi

【 摘 要 】

In this paper we present a novel, quadruple well process developed in a modern 0.18 μm CMOS technology called INMAPS. On top of the standard process, we have added a deep P implant that can be used to form a deep P-well and provide screening of N-wells from the P-doped epitaxial layer. This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. The sensor has been fabricated in the INMAPS process and first experimental evidence of the effectiveness of this process on charge collection is presented, showing a significant improvement in efficiency.

【 授权许可】

CC BY   
© 2008 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.