Progress in the Development of CdTe and CdZnTe Semiconductor Radiation Detectors for Astrophysical and Medical Applications

Sensors

Stefano Del Sordo⁴  Leonardo Abbene⁴  Ezio Caroli¹  Anna Maria Mancini²  Andrea Zappettini³ 

[1] INAF/IASF Bologna, Via Gobetti 101, 40129 Bologna, Italy; E-Mail:;Dipartimento di Ingegneria dell'Innovazione, Università del Salento, Via Arnesano, 73100 Lecce, Italy; E-Mail:;IMEM-CNR, Parco Area delle Scienze 37/A, 43100 Parma, Italy; E-Mail:;INAF/IASF Palermo, Via Ugo La Malfa 153, 90146 Palermo, Italy

关键词: compound semiconductors;    CdTe and CdZnTe detectors;    X-ray and gamma ray spectroscopy;   

DOI  :  10.3390/s90503491

来源: mdpi

【 摘 要 】

Over the last decade, cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) wide band gap semiconductors have attracted increasing interest as X-ray and gamma ray detectors. Among the traditional high performance spectrometers based on silicon (Si) and germanium (Ge), CdTe and CdZnTe detectors show high detection efficiency and good room temperature performance and are well suited for the development of compact and reliable detection systems. In this paper, we review the current status of research in the development of CdTe and CdZnTe detectors by a comprehensive survey on the material properties, the device characteristics, the different techniques for improving the overall detector performance and some major applications. Astrophysical and medical applications are discussed, pointing out the ongoing Italian research activities on the development of these detectors.

【 授权许可】

CC BY   
© 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.