Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

Sensors

Seyedeh Maryam Banihashemian⁴  Hassan Hajghassem²  Alireza Erfanian¹  Majidreza Aliahmadi³  Mansor Mohtashamifar³ 

[1] Electrical Engineering Department, K.N. Toosi University, Tehran, Iran; E-Mail:;Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran;Electronic Research Center, Tehran, Iran; E-Mails:;Department of Physics, Islamic Azad University, Qom Branch, Qom, Iran; E-Mail:

关键词: nanoporous Si;    platinum silicide;    quantum tunneling effect;    negative differential resistance;   

DOI  :  10.3390/s100201012

来源: mdpi

【 摘 要 】

Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM). Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR) and the number of peaks in I–V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.

【 授权许可】

CC BY   
© 2010 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.