Near-Infrared Sub-Bandgap All-Silicon Photodetectors: State of the Art and Perspectives

Sensors

Maurizio Casalino¹  Giuseppe Coppola²  Mario Iodice²  Ivo Rendina² 

[1] Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Ricerche (CNR), Via P. Castellino 111, 80131 Napoli, Italy;

关键词: optoelectronics;    photodetector;    silicon;    waveguide;    ring resonator;    absorption;   

DOI  :  10.3390/s101210571

来源: mdpi

【 摘 要 】

Due to recent breakthroughs, silicon photonics is now the most active discipline within the field of integrated optics and, at the same time, a present reality with commercial products available on the market. Silicon photodiodes are excellent detectors at visible wavelengths, but the development of high-performance photodetectors on silicon CMOS platforms at wavelengths of interest for telecommunications has remained an imperative but unaccomplished task so far. In recent years, however, a number of near-infrared all-silicon photodetectors have been proposed and demonstrated for optical interconnect and power-monitoring applications. In this paper, a review of the state of the art is presented. Devices based on mid-bandgap absorption, surface-state absorption, internal photoemission absorption and two-photon absorption are reported, their working principles elucidated and their performance discussed and compared.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.