Ge-Photodetectors for Si-Based Optoelectronic Integration

Sensors

Jian Wang¹ 

[1] Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576 Singapore, Singapore; E-Mail

关键词: germanium;    photodetector;    Si photonics;   

DOI  :  10.3390/s110100696

来源: mdpi

【 摘 要 】

High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 μm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends.

【 授权许可】

CC BY   
© 2011 by the authors; licensee MDPI, Basel, Switzerland.