Gate-Induced Thermally Stimulated Current on the Ferroelectric-like Dielectric Properties of (BEDT-TTF)(TCNQ) Crystalline Field Effect Transistor

Crystals

Masatoshi Sakai²  Mitsutoshi Hanada²  Shigekazu Kuniyoshi²  Hiroshi Yamauchi²  Masakazu Nakamura¹ 

[1] Graduate School of Materials Science, Nara Institute of Science and Technology (NAIST), 8916-5 Takayama, Ikoma, Nara 630-0192, Japan;Department of Electrical and Electronic Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan;

关键词: ferroelectricity;    pyroelectric current;    field effect transistor;    Mott insulator;    charge order;   

DOI  :  10.3390/cryst2030730

来源: mdpi

【 摘 要 】

A gate-induced thermally stimulated current (TSC) on β´-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied and has a peak at around 285 K was assigned as a pyroelectric current. By integrating the pyroelectric current, temperature dependence of the remnant polarization charge was obtained and the existence of the ferroelectric phase transition at 285 K was clearly demonstrated. We have tentatively concluded that the phase transition between dimer Mott insulator and charge ordered phase occurred at around the interface of organic crystal and substrate.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.