InN Nanowires: Growth and Optoelectronic Properties

Materials

关键词: self-assembly semiconducting;    molecular beam epitaxy (MBE);    nanoscale;    electrical properties;    III-V;    optical properties;    optoelectronic;    photoconductivity;   

DOI  :  10.3390/ma5112137

来源: mdpi

【 摘 要 】

An overview on InN nanowires, fabricated using either a catalyst-free molecular beam epitaxy method or a catalyst assisted chemical vapor deposition process, is provided. Differences and similarities of the nanowires prepared using the two techniques are presented. The present understanding of the growth and of the basic optical and transport properties is discussed.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.