Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

Materials

Budi Astuti²  Masahiro Tanikawa¹  Shaharin Fadzli Abd Rahman²  Kanji Yasui¹ 

[1] Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka, Nagaoka, Niigata 9402136, Japan; E-Mails:;Ibnu Sina Institute for Fundamental Science Studies, Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai, Johor 81310, Malaysia; E-Mails:

关键词: graphene;    silicon carbide;    insulator;    buffer layer;    hot-mesh CVD;   

DOI  :  10.3390/ma5112270

来源: mdpi

【 摘 要 】

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO₂ substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.

【 授权许可】

CC BY   
© 2012 by the authors; licensee MDPI, Basel, Switzerland.