Materials | |
Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal Evaporation | |
Nurul Izni Rusli1  Masahiro Tanikawa2  Mohamad Rusop Mahmood3  Kanji Yasui2  | |
[1] Faculty of Electrical Engineering, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia; E-Mail:;Department of Electrical Engineering, Nagaoka University of Technology, Kamitomioka-machi, Nagaoka, Niigata 940-2137, Japan; E-Mails:;Faculty of Electrical Engineering, Universiti Teknologi MARA, Shah Alam 40450, Selangor, Malaysia; E-Mail: | |
关键词: zinc oxide; nanorods; porous silicon; thermal evaporation; vapor-liquid-solid; | |
DOI : 10.3390/ma5122817 | |
来源: mdpi | |
【 摘 要 】
The formation of high-density zinc oxide (ZnO) nanorods on porous silicon (PS) substrates at growth temperatures of 600–1000 °C by a simple thermal evaporation of zinc (Zn) powder in the presence of oxygen (O2) gas was systematically investigated. The high-density growth of ZnO nanorods with (0002) orientation over a large area was attributed to the rough surface of PS, which provides appropriate planes to promote deposition of Zn or ZnO
【 授权许可】
CC BY
© 2012 by the authors; licensee MDPI, Basel, Switzerland.
【 预 览 】
Files | Size | Format | View |
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RO202003190039847ZK.pdf | 1562KB | download |