A Study on Graphene—Metal Contact

Crystals

Wenjun Liu²  Jun Wei³  Xiaowei Sun¹ 

[1] Department of Electronic and Computer Engineering, South University of Science and Technology, Shenzhen, Guangdong 518055, China; E-Mail:;Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-8656, Japan; E-Mail:;Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, Singapore 638075; E-Mail:

关键词: graphene;    field-effect transistor;    contact resistance;    Raman;   

DOI  :  10.3390/cryst3010257

来源: mdpi

【 摘 要 】

The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.

【 授权许可】

CC BY   
© 2013 by the authors; licensee MDPI, Basel, Switzerland.