Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

Journal of Low Power Electronics and Applications

Yasuhisa Omura¹ 

[1] Organization for Research and Development of Innovative Science and Technology (ORDIST), Kansai University, Yamate-cho, Suita 564-8680, Japan

关键词: XCT-SOI MOSFET;    quasi-static body floating effect;    source potential floating effect;    low energy;    medical applications;   

DOI  :  10.3390/jlpea4010015

来源: mdpi

【 摘 要 】

This paper describes the performance prospect of scaled cross-current tetrode (XCT) CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher) stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.