Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Journal of Low Power Electronics and Applications

Marc Bocquet²  Hassen Aziza²  Weisheng Zhao³  Yue Zhang³  Santhosh Onkaraiah²  Christophe Muller²  Marina Reyboz¹  Damien Deleruyelle²  Fabien Clermidy¹ 

[1] Commissariat � l’Énergie Atomique - Laboratoire d�Électronique et de Technologie de l�Information (CEA-Léti), 38054 Grenoble, France; E-Mails:;Institut Matériaux Microélectronique Nanosciences de Provence(IM2NP), Aix-Marseille Université, Centre national de la recherche scientifique (CNRS), UMR 7334, 13284 Marseille, France; E-Mails:;Institut d’Électronique Fondamentale(IEF), University of Paris-Sud, Centre national de la recherche scientifique (CNRS), UMR 8622, F91405 Orsay, France; E-Mails:

关键词: compact modeling;    RRAM;    OxRAM;    design;   

DOI  :  10.3390/jlpea4010001

来源: mdpi

【 摘 要 】

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.