A Label-Free Immunosensor for IgG Based on an Extended-Gate Type Organic Field Effect Transistor

Materials

Tsukuru Minamiki³  Tsuyoshi Minami³  Ryoji Kurita²  Osamu Niwa²  Shin-ichi Wakida¹  Kenjiro Fukuda³  Daisuke Kumaki³ 

[1] Health Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2217-14 Hayashi, Takamatsu, Kagawa 761-0395, Japan; E-Mail:;Biomedical Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 6, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8566, Japan; E-Mails:;Research Center for Organic Electronics (ROEL), Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata 992-8510, Japan; E-Mails:

关键词: organic field effect transistor;    immunosensor;    label-free;    immunoglobulin G;    self-assembled monolayer;   

DOI  :  10.3390/ma7096843

来源: mdpi

【 摘 要 】

A novel biosensor for immunoglobulin G (IgG) detection based on an extended-gate type organic field effect transistor (OFET) has been developed that possesses an anti-IgG antibody on its extended-gate electrode and can be operated below 3 V. The titration results from the target IgG in the presence of a bovine serum albumin interferent, clearly exhibiting a negative shift in the OFET transfer curve with increasing IgG concentration. This is presumed to be due an interaction between target IgG and the immobilized anti-IgG antibody on the extended-gate electrode. As a result, a linear range from 0 to 10 µg/mL was achieved with a relatively low detection limit of 0.62 µg/mL (=4 nM). We believe that these results open up opportunities for applying extended-gate-type OFETs to immunosensing.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.