A Three-Dimensional Microdisplacement Sensing System Based on MEMS Bulk-Silicon Technology

Sensors

Junjie Wu²  Lihua Lei¹  Xin Chen²  Xiaoyu Cai¹  Yuan Li¹ 

[1] Shanghai Institute of Measurement and Testing Technology, National Center of Measurement and Testing for East China, National Center of Testing Technology, No. 1500, Zhangheng Road, Shanghai 201203, China; E-Mails:;School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, No. 800, Dongchuan Road, Shanghai 200240, China; E-Mails:

关键词: dimensional metrology;    piezoresistor;    MEMS;    microtactile sensor;   

DOI  :  10.3390/s141120533

来源: mdpi

【 摘 要 】

For the dimensional measurement and characterization of microsized and nanosized components, a three-dimensional microdisplacement sensing system was developed using the piezoresistive effect in silicon. The sensor was fabricated using microelectromechanical system bulk-silicon technology, and it was validated using the finite element method. A precise data acquisition circuit with an accuracy of 20 μV was designed to obtain weak voltage signals. By calibration, the sensing system was shown to have a sensitivity of 17.29 mV/μm and 4.59 mV/μm in the axial and lateral directions, respectively; the nonlinearity in these directions was 0.8% and 1.0% full scale, respectively. A full range of 4.6 μm was achieved in the axial direction. Results of a resolution test indicated that the sensing system had a resolution of 5 nm in the axial direction and 10 nm in the lateral direction.

【 授权许可】

CC BY   
© 2014 by the authors; licensee MDPI, Basel, Switzerland.